Abstract
Geometric programming (GP) is an optimization method to produce globally optimal circuit parameters with high computational efficiency. Such a method has been applied to short-channel (90 nm and 180 nm) CMOS Low Noise Amplifiers (LNAs) with common-source inductive degeneration to obtain optimal design parameters by minimizing the noise figure. An extensive survey of analytical models and experimental results reported in the literature was carried out to quantify the issue of excessive thermal noise for short-channel MOSFETs. Geometric programming compatible functions have been determined to calculate the noise figure of short-channel CMOS devices by taking into consideration channel-length modulation and velocity saturation effects.
Date of publication
Spring 5-1-2012
Document Type
Thesis
Language
english
Persistent identifier
http://hdl.handle.net/10950/75
Recommended Citation
Jin, Xiaoyu, "Optimization of Short-Channel RF CMOS Low Noise Amplifiers by Geometric Programming" (2012). Electrical Engineering Theses. Paper 15.
http://hdl.handle.net/10950/75