Abstract

The memristor was proposed over forty years ago by Leon Chua as the missing 4th two-terminal nonlinear circuit element. Recently Hewlett-Packard (HP) announced the first fabrication of a device following memristor circuit rules. HP's device is a cross-bar resistive hysteretic switch designed for nonvolatile high density memory applications. In this thesis well-known one-dimensional drift models, which assume sinusoidal voltage sources, were used to predict level of frequency sensitivity in hysteresis curves and instantaneous power curves for memristors. Drift model simulation tests, with ac voltage sources, indicate that the memristor frequency response scales inversely with an identified time constant predicted from physical properties and memristor dimensions. Simulation tests also demonstrate a procedure to obtain maximum in the memristor's hysteresis loop opening. The previously established nonlinear and linear drift models, for ac sources were reanalyzed in this thesis to predict current voltage hysteresis with digital type square wave sources. Simulation results were compared with current voltage hysteresis data reported for HP's memristor.

Date of publication

Spring 4-30-2012

Document Type

Thesis

Language

english

Persistent identifier

http://hdl.handle.net/10950/67

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